publication . Article . 2013

Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors

Fabiano, Simone; Braun, Slawomir; Fahlman, Mats; Crispin, Xavier; Berggren, Magnus;
Open Access
  • Published: 28 Aug 2013 Journal: Advanced Functional Materials, volume 24, pages 695-700 (issn: 1616-301X, Copyright policy)
  • Publisher: Wiley
  • Country: Sweden
Abstract
Systematic investigation of the contact resistance in electrolyte-gated organic field-effect transistors (OFETs) demonstrates a dependence of source charge injection versus gate electrode work function. This analysis reveals contact-limitations at the source metal-semiconductor interface and shows that the contact resistance increases as low work function metals are used as the gate electrode. These findings are attributed to the establishment of a built-in potential that is high enough to prevent the Fermi-level pinning at the metal-organic interface. This results in an unfavorable energetic alignment of the source electrode with the valence band of the organic...
Subjects
free text keywords: Chemical Sciences, Kemi, Physical Sciences, Fysik, Electrochemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Biomaterials, Organic semiconductor, Gate oxide, Work function, Materials science, Contact resistance, Electrode, Optoelectronics, business.industry, business, Inorganic chemistry, Nanotechnology, Field-effect transistor, Transistor, law.invention, law, Electrolyte
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publication . Article . 2013

Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors

Fabiano, Simone; Braun, Slawomir; Fahlman, Mats; Crispin, Xavier; Berggren, Magnus;