publication . Article . 2008

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.;
Open Access
  • Published: 14 Apr 2008 Journal: Applied Physics Letters, volume 92, page 151,904 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
  • Country: Sweden
Abstract
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra for the annealed samples. The temporal changes in PL are permanent at low temperatures; however, they can be recovered after heating to 100 K or higher. Original publicatio...
Subjects
free text keywords: annealing, energy gap, excitons, gallium compounds, III-V semiconductors, impurity states, magnesium, semiconductor thin films, vapour phase epitaxial growth, Natural Sciences, Naturvetenskap, Physics and Astronomy (miscellaneous), Optoelectronics, business.industry, business, Exciton, Metastability, Photoluminescence, Epitaxy, Annealing (metallurgy), Physics, Halide, Analytical chemistry, Doping, Band gap
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