publication . Article . Other literature type . 2016

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates

Name: Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates
Keywords: General Materials Science, Al2O3, MOSCAP, SiGe, high-k, interface traps

Joseph C. Woicik; Yuzheng Guo; Kechao Tang; Majeed A. Foad; John Robertson; Vinayak Vishwanath Hassan; Piero Pianetta; Paul C. McIntyre; Liangliang Zhang;

Open Access

Published: 12 Jul 2016 Journal: ACS Applied Materials & Interfaces, volume 8, pages 19,110-19,118 (issn: 1944-8244, eissn: 1944-8252,

Publisher: American Chemical Society (ACS)

Country: United Kingdom

Summary

Abstract

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both Si...

Persistent Identifiers

doi: 10.1021/acsami.6b03331 , 10.17863/cam.6592

Subjects

free text keywords: General Materials Science, Al2O3, MOSCAP, SiGe, high-k, interface traps, Surface layer, X-ray photoelectron spectroscopy, Annealing (metallurgy), Forming gas, High-κ dielectric, Materials science, Optoelectronics, business.industry, business, Silicon oxide, Gate dielectric, Atomic layer deposition

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