Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.
Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC;
- Publisher: ACS Appl Mater Interfaces
Related identifiers: - Subject: Al2O3 | MOSCAP | SiGe | atomic layer deposition | high-k | interface traps
Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel materi... View more