Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Article English OPEN
Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC; (2016)
  • Publisher: ACS Appl Mater Interfaces
  • Related identifiers: doi: 10.17863/CAM.6592
  • Subject: Al2O3 | MOSCAP | SiGe | atomic layer deposition | high-k | interface traps
Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel materi... View more
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