publication . Other literature type . Article . 2016 . Embargo end date: 02 Dec 2016

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Name: Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.
Creator: Yuzheng Guo

Yuzheng Guo;

Published: 12 Jul 2016

Publisher: Apollo - University of Cambridge Repository

Country: United Kingdom

Summary

Abstract

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both Si...

doi: 10.17863/cam.6592 , 10.1021/acsami.6b03331

Subjects

free text keywords: Al2O3, MOSCAP, SiGe, atomic layer deposition, high-k, interface traps, General Materials Science, Surface layer, Forming gas, Inorganic chemistry, X-ray photoelectron spectroscopy, Gate dielectric, Optoelectronics, business.industry, business, High-κ dielectric, Silicon oxide, Materials science, Annealing (metallurgy)

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