publication . Article . 2015

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef;
Open Access English
  • Published: 01 Jan 2015
  • Publisher: AMSTERDAM
Abstract
The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm(2) and below. (C) 2014 Elsevier B.V. All rights reserved. wet chemical cleaning...
Subjects
free text keywords: Wet chemical cleaning; Surface treatment; Intrinsic amorphous silicon; Boron emitter; Passivat ion; Annealing
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