GaAs-based Dilute Nitrides: Properties and Devices

Doctoral thesis English OPEN
Peng, Changsi;
  • Publisher: Tampere University of Technology

It is well-known that a small amount of nitrogen in InGaAs / GaAs quantum wells (QWs) causes a bandgap-bowing effect in the electronic band structure. While widening the spectral range of GaAs is a much desired consequence of bandgap-bowing, the presence of nitrogen ten... View more
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