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Conference object . 2017
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Влияние параметров источника питания магнетрона на свойства плёнок нитрида кремния

descriptionPublicationkeyboard_double_arrow_right Conference object 17 Jul 2017 Russian Publisher:Изд-во ТПУ

Влияние параметров источника питания магнетрона на свойства плёнок нитрида кремния

Abstract

Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41·1023 - 3.48·1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.

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Keywords

плазмообразующие газы, нитрид кремния, спектроскопия, магнетронное распыление, эллипсометрия

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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