publication . Thesis . 2008

GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS

Tut, Turgut;
Open Access English
  • Published: 01 Jan 2008
  • Publisher: Bilkent University
  • Country: Turkey
Abstract
Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 2008. Thesis (Ph.D.) -- Bilkent University, 2008. Includes bibliographical references leaves 73-80. The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver sensitivity, low noise, low dark current density, and high speed. AlGaN-based Schottky, p-i-n, and metal-semiconductor-metal photodetectors (MSM) with very high performances have already been demonstrated. The UVfiltering nature of the atmo...
Subjects
free text keywords: Photodetectors, high gain, Avalanche, GaN, AlGaN, TK7871.89.S35 T881 2008, Diodes, Schottky-barrier., Photoelectronic devices., Photon detectors.
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