publication . Article . 2001

N-side illuminated microcrystalline silicon solar cells

Arup Dasgupta;
Open Access
  • Published: 22 Oct 2001 Journal: Applied Physics Letters, volume 79, pages 2,841-2,843 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
  • Country: Germany
Abstract
Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the J-V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 mum. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of muc-Si:H single junction solar cells of conventional thickness may be randomly chosen wit...
Subjects
free text keywords: J, Optoelectronics, business.industry, business, Silicon, chemistry.chemical_element, chemistry, Optics, Plasmonic solar cell, Physics, Quantum dot solar cell, Quantum efficiency, Theory of solar cells, Polymer solar cell, Monocrystalline silicon, Hybrid solar cell, ddc:530
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publication . Article . 2001

N-side illuminated microcrystalline silicon solar cells

Arup Dasgupta;