publication . Article . 2010

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

M. Roeckerath; J. M. J. Lopes; E. Durğun Özben; C. Urban; J. Schubert; S. Mantl; Y. Jia; D. G. Schlom;
Open Access English
  • Published: 04 Jan 2010
  • Publisher: American Institute of Physics
  • Country: Germany
Abstract
Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted.
Subjects
free text keywords: J, dielectric hysteresis, dielectric thin films, electron mobility, insulated gate field effect transistors, permittivity, Rutherford backscattering, terbium compounds, vacuum deposition, X-ray diffraction, ddc:530, Physics and Astronomy (miscellaneous), Terbium, chemistry.chemical_element, chemistry, Gate dielectric, Dielectric, Silicon, Rutherford backscattering spectrometry, Analytical chemistry, Thin film, Physics
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publication . Article . 2010

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

M. Roeckerath; J. M. J. Lopes; E. Durğun Özben; C. Urban; J. Schubert; S. Mantl; Y. Jia; D. G. Schlom;