Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Article English OPEN
Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.;
(2010)
  • Publisher: American Institute of Physics
  • Journal: issn: 0003-6951
  • Publisher copyright policies & self-archiving
  • Related identifiers: doi: 10.1063/1.3275731
  • Subject: J | dielectric hysteresis | dielectric thin films | electron mobility | insulated gate field effect transistors | permittivity | Rutherford backscattering | terbium compounds | vacuum deposition | X-ray diffraction
    • ddc: ddc:530

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with smal... View more
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