Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
Lopes, J. M. J.
Durgun Özben, E.
- Publisher: American Institute of Physics
J | dielectric hysteresis | dielectric thin films | electron mobility | insulated gate field effect transistors | permittivity | Rutherford backscattering | terbium compounds | vacuum deposition | X-ray diffraction
Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with smal...