publication . Article . 2004

Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

A. Barranco; J. Cotrino; F. Yubero; J. P. Espinós; A. R. González-Elipe;
Open Access English
  • Published: 01 Jul 2004
  • Publisher: AVS Science and Technology Society
  • Country: Spain
Abstract
Silicon dioxide thin films with variable and controlled porosity have been prepared at room temperature by plasma enhanced chemical vapor deposition in an electron cyclotron resonance microwave reactor with a downstream configuration. The procedure consists of the deposition of successive cycles consisting of a sacrificial organic-polymeric layer and, afterward, a silicon dioxide layer. Toluene and oxygen are used as precursors of the organic layers and Si(CH3)3Cl and oxygen for the SiO2. During deposition of the latter, the organic layer is simultaneously burned off. In these conditions, the release of gases produced by oxidation of the organic-polymeric layer ...
Subjects
Medical Subject Headings: technology, industry, and agricultureequipment and supplies
free text keywords: Layer by layer, Chemistry, Silicon oxide, Plasma-enhanced chemical vapor deposition, Analytical chemistry, Carbon film, Oxide, chemistry.chemical_compound, Thin film, Atomic layer deposition, Combustion chemical vapor deposition
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publication . Article . 2004

Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

A. Barranco; J. Cotrino; F. Yubero; J. P. Espinós; A. R. González-Elipe;