Диэлектрическая спектроскопия модифицированных слоев триселенида мышьяка
Copyright policy )Диэлектрическая спектроскопия модифицированных слоев триселенида мышьяка
On basis the experimental curves of the isothermal relaxation of dark electric currents in thin films of vitreous chalcogenide semiconductors As2Se3(Bi)x the permittivity and the dielectric loss were calculated. The influence of the conducting unites with the increasing of bismuth concentration on dielectric polarization process in the investigated layers are discussed.
На основании экспериментальных кривых изотермической релаксации темнового тока в тонких пленках стеклообразного полупроводника As2Se3(Bi)x, проведен расчет диэлектрической проницаемости и тангенса угла диэлектрических потерь. Обсуждается влияние высокопроводящих включений с повышенным содержанием примеси на процесс диэлектрической поляризации в исследуемых слоях.
диэлектрические параметры, микронеоднородные области, хсп
диэлектрические параметры, микронеоднородные области, хсп
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