publication . Article . Conference object . Other literature type . 2009

Triple junction InGaP/GaAS/Ge solar cell optimization: The design parameters for a 36.2% efficient space cell using Silvaco ATLAS modeling & simulation

Tsutagawa, Michael H.; Michael, Sherif;
Open Access
  • Published: 01 Jun 2009
  • Publisher: IEEE
Abstract
This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses. An initial dual junction InGaP/GaAs model of a known Japanese solar cell was constructed in Silvaco ATLAS to an accuracy of less than 2% with known experimental V oc and J sc performance results, validating the use of computer modeling to accurately predict solar cell performance. Once confidence of the model's meshing, material property statements, model statements, light file, and numeri...
Subjects
free text keywords: Fabrication, Modeling and simulation, Optoelectronics, business.industry, business, Semiconductor device modeling, Physics, Triple junction, Current limiting, Doping, Solar cell, law.invention, law, Gallium arsenide, chemistry.chemical_compound, chemistry
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publication . Article . Conference object . Other literature type . 2009

Triple junction InGaP/GaAS/Ge solar cell optimization: The design parameters for a 36.2% efficient space cell using Silvaco ATLAS modeling & simulation

Tsutagawa, Michael H.; Michael, Sherif;