publication . Article . 1992

Electron-beam lithography with the scanning tunneling microscope

Marrian, Christie R. K.;
Open Access
  • Published: 01 Nov 1992 Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, volume 10, page 2,877 (issn: 0734-211X, Copyright policy)
  • Publisher: American Vacuum Society
The scanning tunneling microscope (STM), operated in vacuum in the field emission mode, has been used in lithographic studies of the resist SAL‐601 from Shipley. Patterns have been written by raising the tip–sample voltage above −12 V while operating the STM in the constant current mode. Resist films, 50 nm thick, have been patterned and the pattern transferred into the GaAs substrate by reactive ion etching. The variation of feature size with applied dose and tip–sample bias voltage has been studied. Comparisons have been made to lithography with a 10 nm, 50 kV electron e‐beam in a JEOL JBX‐5DII in the same resist thickness films. In all cases the resist films ...
free text keywords: Chemistry, Optics, business.industry, business, Scanning tunneling microscope, law.invention, law, Ultra-high vacuum, Resist, Lithography, Field electron emission, Reactive-ion etching, Biasing, Analytical chemistry, Electron-beam lithography
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