publication . Article . Preprint . Other literature type . 2018

A phase-change memory model for neuromorphic computing

S. R. Nandakumar; Manuel Le Gallo; Irem Boybat; Bipin Rajendran; Abu Sebastian; Evangelos Eleftheriou;
Open Access
  • Published: 21 Oct 2018
  • Publisher: Melville, AMER INST PHYSICS
  • Country: Switzerland
Phase-change memory (PCM) is an emerging non-volatile memory technology that is based on the reversible and rapid phase transition between the amorphous and crystalline phases of certain phase-change materials. The ability to alter the conductance levels in a controllable way makes PCM devices particularly well-suited for synaptic realizations in neuromorphic computing. A key attribute that enables this application is the progressive crystallization of the phase-change material and subsequent increase in device conductance by the successive application of appropriate electrical pulses. There is significant inter- and intra-device randomness associated with this ...
free text keywords: General Physics and Astronomy, Conductance, Randomness, Phase-change memory, Crystal, Neuromorphic engineering, Statistical model, Rapid phase transition, Amorphous solid, Physics, Biological system, Condensed matter physics
Funded by
Computation-in-memory architecture based on resistive devices
  • Funder: European Commission (EC)
  • Project Code: 780215
  • Funding stream: H2020 | RIA
Powered by OpenAIRE Research Graph
Any information missing or wrong?Report an Issue