publication . Article . 2014

A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy

Riikka L. Puurunen;
Open Access
  • Published: 15 Oct 2014
  • Publisher: Wiley
Abstract
Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas‐solid reactions. The principle of ALD has been discovered twice; in the 1960s under the name “molecular layering” in the Soviet Union, and in the 1970s under the name “atomic layer epitaxy” (ALE) in Finland. In 2014, it is forty years since the filing of the worldwide patent on ALE as a method for the growth of compound thin films. This essay celebrates the fortieth anniversary of ALE‐ALD, briefly telling the story of ALE as shared by its Finnish inventor, Dr. Tuomo Suntola. Initially, ALE was aimed at the growth of high‐quality polycrystalline ZnS...
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free text keywords: Process Chemistry and Technology, General Chemistry, Surfaces and Interfaces, Virtual Project on the History of ALD, VPHA, atomic layer deposition, ALD, atomic layer epitaxy, ZnS, EL displays, history, Industrial history, Atomic layer epitaxy, Application areas, Soviet union, Atomic layer deposition, Nanotechnology, Materials science, Thin film
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