publication . Article . 2020

Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium

Stefanos Chaitoglou; A. Dimoulas; C. M. Istrate; C. Zacharaki; Evangelos Evangelou; P. Tsipas; Lucian Pintilie;
Open Access English
  • Published: 04 May 2020 Journal: Applied Physics Letters, volume 116, issue 18, page 182,904 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1−xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (<160 K), a semiconductor depletion forms in Ge near the interface, resulting in an increase in coercive voltage by about 2 V, accompanied by a distortion of the ferroelectric hysteresis with subloop asymmetric behavior, which becomes more severe at higher frequencies of measurement. At higher temperatures, the Ge surface near the ferroelectric is ea...
free text keywords: ferroelectric HZO, germanium, depolarization field, Ge-MFS capacitors, Physics and Astronomy (miscellaneous), Hysteresis, Capacitor, law.invention, law, Semiconductor, business.industry, business, Condensed matter physics, Coercivity, Materials science, Field-effect transistor, Low voltage, Germanium, chemistry.chemical_element, chemistry, Ferroelectricity
Funded by
Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2
  • Funder: European Commission (EC)
  • Project Code: 780302
  • Funding stream: H2020 | RIA
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