publication . Article . Other literature type . 2019

Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering

T. Mittmann; M. Materano; P. D. Lomenzo; M. H. Park; I. Stolichnov; M. Cavalieri; C. Zhou; J. L. Jones; T. Szyjka; M. Müller; ...
Open Access English
  • Published: 17 Jun 2019
Thin lm metal–insulator–metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The in uence of lm thickness and annealing temperature is characterized by electrical and structural methods. After annealing, the lms show distinct ferroelectric properties. Grazing incidence X-ray diffraction measurements reveal a dominant ferroelectric orthorhombic phase for thick- nesses in the 10–50 nm range and a negligible non-ferroelectric monoclinic phase fraction. Sputtering HfO2 with additional oxygen during the deposition decreases the remanent polarization. Overall, the impact of oxygen vacancies an...
Funded by
Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2
  • Funder: European Commission (EC)
  • Project Code: 780302
  • Funding stream: H2020 | RIA
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Article . 2019
Provider: ZENODO
Other literature type . 2019
Provider: Datacite
Other literature type . 2019
Provider: Datacite
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