publication . Doctoral thesis . 2005

SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks

Svitek, Richard M.;
Open Access
  • Published: 07 Apr 2005
  • Publisher: Virginia Tech
  • Country: United States
The advent of high-fT silicon CMOS/BiCMOS technologies has led to a dramatic upsurge in the research and development of radio and microwave frequency integrated circuits (ICs) in silicon. The integration of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) into established "digital" CMOS processes has provided analog performance in silicon that is not only competitive with III-V compound-semiconductor technologies, but is also potentially lower in cost. Combined with improvements in silicon on-chip passives, such as high-Q metal-insulator-metal (MIM) capacitors and monolithic spiral inductors, these advanced RF CMOS and SiGe BiCMOS technologies ha...
free text keywords: direct-conversion, 5 GHz, IEEE 802.11a, phase tunability, RF front-end, RFIC, quadrature VCO, sub-harmonic, SiGe, U-NII, WLAN, integrated circuit
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Doctoral thesis . 2005
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