publication . Conference object . 2017

GaN HEMT class-E rectifier for DC+AC power recovery

Ruiz Lavín, María de las Nieves; Vegas Bayer, David; Pérez Cisneros, José Ramón; García García, José Ángel;
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  • Published: 01 Jan 2017
  • Publisher: IEEE
  • Country: Spain
Abstract
A 915 MHz GaN HEMT-based class-E rectifier is proposed in this paper to be used for DC+AC wireless power recovery. Taking advantage of the time reversal (TR) duality principle, the rectifier was derived from a class-E inverter, whose output network was designed for high-efficiency operation over a wide range of resistive loads. The addition of an appropriate gateside termination allows the device to be turned-on without an additional RF source for gate driving. The rectifier reduced sensitivity to load variation, as well as its capability for efficiently and linearly recovering the envelope of an AM RF excitation, were then characterized. An average efficiency o...
Subjects
free text keywords: Electronic engineering, Inverter, High-electron-mobility transistor, Frequency modulation, AC power, Rectifier, Electrical engineering, business.industry, business, Precision rectifier, Frequency-division multiplexing, Power transmission, Engineering, Class-E, GaN HEMT, Wireless power transmission
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publication . Conference object . 2017

GaN HEMT class-E rectifier for DC+AC power recovery

Ruiz Lavín, María de las Nieves; Vegas Bayer, David; Pérez Cisneros, José Ramón; García García, José Ángel;