publication . Thesis . 2011

Transport properties at 3C-SiC interfaces

Eriksson, Gustav Jens Peter;
Open Access
  • Published: 02 May 2011
  • Publisher: Universita' degli Studi di Catania
  • Country: Italy
For years cubic (3C) silicon carbide (SiC) has been believed to be a very promising wide bandgap semiconductor for high frequency and high power electronics. However, 3C-SiC is fraught with large concentrations of various defects, which have so far hindered the achievement of the predicted properties at a macroscopic level. These defects have properties that are inherently nanoscale and that will have a strong influence on the electrical behavior of the material, particularly at interfaces commonly found in electronic devices. The aim of this thesis is then to understand and overcome some of the challenges faced for fabrication of electronic devices in this mate...
free text keywords: :NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfaces [Research Subject Categories], :NATURAL SCIENCES::Physics::Condensed matter physics::Semiconductor physics [Research Subject Categories]
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Thesis . 2011
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