Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

Doctoral thesis English OPEN
Boubekeur, Hocine (2004)
  • Subject: RAM | Ferroelektrikum | CMOS | Kontamination | Technische Fakultät -ohne weitere Spezifikation-
    • ddc: ddc:620

n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high... View more
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