Doping of III-nitride materials

Article English OPEN
Pampili, Pietro; Parbrook, Peter J.;
(2016)
  • Publisher: Elsevier
  • Embargo end date: 2017-05-12
  • Related identifiers: doi: 10.1016/j.mssp.2016.11.006
  • Subject: Gallium nitride | Indium nitride | Aluminium nitride | Semiconductors | Doping | Conductivity

In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping re... View more
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