publication . Conference object . 2016

Amplificador de Potencia de Alto Rendimiento Clase E en Banda S

Patiño Gómez, Moisés; Ortega González, Francisco Javier; Nicolás García, Miguel; Tena Ramos, David; Pardo Martín, José Manuel;
Open Access Spanish; Castilian
  • Published: 01 Jan 2016
  • Publisher: E.T.S.I y Sistemas de Telecomunicación (UPM)
  • Country: Spain
Abstract
High-efficiency power amplification techniques are currently a well-known research field. A S-band suboptimum Class-E power amplifier based on a unmatched packaged GaN HEMT has been designed and built in this work. The load network of this amplifier is made of microstrip transmission lines and it is based on the double-reactance compensation principle. This kind of switchmode RF power amplifiers can be a solution for high-efficiency microwave amplification when nominal Class-E is not possible. The implemented prototype operates from 2.1 GHz to 2.6 GHz showing 79% peak drain efficiency with 14 W peak output power and 13.6 dB power gain at 2.4 GHz. This amplifier ...
Subjects
free text keywords: Electrónica
Related Organizations
Download from
Archivo Digital UPM
Conference object . 2016
Powered by OpenAIRE Research Graph
Any information missing or wrong?Report an Issue