Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys

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Milanova, M; Donchev, V; Kostov, KL; Alonso-Alvarez, D; Valcheva, E; Kirilov, K; Asenova, I; Ivanov, IG; Georgiev, S; Ekins-Daukes, N;
  • Publisher: IOP Publishing
  • Identifiers: doi: 10.1088/1361-6641/aa7404
  • Subject: microstructure | Physics, Condensed Matter | 0912 Materials Engineering | MOLECULAR-BEAM EPITAXY | Applied Physics | SEMICONDUCTORS | Engineering, Electrical & Electronic | Physical Sciences | SPECTROSCOPY | Physics | LPE | InGaAsN | Materials Science | dilute nitrides | NITROGEN | Technology | Engineering | Materials Science, Multidisciplinary | Science & Technology | DEFECTS | LUMINESCENCE EFFICIENCY | GAAS | SOLAR-CELLS | local ordering | GAINASN | RAMAN | 0204 Condensed Matter Physics
    arxiv: Condensed Matter::Materials Science

We present a study of melt grown dilute nitride InGaAsN layers by x-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectroscopy. The purpose of the study is to determine the degree of atomic ordering in the quaternary alloy during the epitaxial g... View more
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