publication . Other literature type . Doctoral thesis . 2015

Development of Silicon Drift Detectors using Boron layer technology

Golshani, N.;
  • Published: 29 Jun 2015
  • Publisher: Delft University of Technology
  • Country: Netherlands
Radiation detectors are used in a large variety of fields such as medicine, security, defense, geophysics, industry and physics. They have been developed to detect the energy or position of radiation or charge particles. In Chapter 1 several X-ray detectors were introduced briefly. In gas filled X-ray detectors, incoming photons ionize inert gas and create electron and ions which can be collected at a thin wire anode inside of the chamber. The advantage of this type of detector is the possibility to amplify the signal or charge, hence a high signal to noise ratio. However, they suffer from low efficiency for X-ray detection due to low density of the filled gas. ...
free text keywords: X-ray detector, silicon drift detector, thin entrance window SDD, PureB SDD, continuous SDD, constant field SDD, boron layer, dual PureB layer, ZrN diffusion barrier, PureB high-Ohmic resistor, silicon interposer package, on-chip front-end electronics, PureB JFET

Negin Golshani, J. Derakhshandeh, C.I.M. Beenakker, R. Ishihara, “PureB multi-guard ring structures for detector applications”, submitted to Microelectronic Engineering journal 2015.

Derakhshandeh, T.M.L. Scholtes, W.D. de Boer, “Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices”, ECS Trans. 2012, vol. 49, No. 1, 27th Symposium on Microelectronics Technology and Devices (SBMicro), Brazil, Brasilia, pp. 25-33, 2012.

R. Ishihara, M. R. T. Mofrad, J. Derakhshandeh, N. Golshani and C. I. M. Beenakker, “Monolithic 3D- ICs with Single Grain Si Thin Film Transistors”, IEEE 11th International Conference on SolidState and Integrated Circuit Technology (ICSICT), Xi'an, pp. 1-4, Oct.2012.

DOI:10.1109/ICSICT.2012.6467714 R. Ishihara, N. Golshani, J. Derakhshandeh, M.R. Tajari Mofrad and C.I.M. Beenakker, “Monolithic 3D-ICs with single grain Si thin film transistors”, 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, pp. 1-4, Mar. 2011.

DOI: 10.1109/ULIS.2011.5758004.

N. Golshani, W.B. de Boer, T.L.M. Scholtes, A. Sakic, L.K. Nanver, “The influence of stacking faults on the leakage current of B-layer p+n diodes”, Proc. STW-SAFE, Veldhoven, Nederland, pp. 81-84, 2010.

Powered by OpenAIRE Research Graph
Any information missing or wrong?Report an Issue