Negin Golshani, J. Derakhshandeh, C.I.M. Beenakker, R. Ishihara, “PureB multi-guard ring structures for detector applications”, submitted to Microelectronic Engineering journal 2015.
Derakhshandeh, T.M.L. Scholtes, W.D. de Boer, “Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices”, ECS Trans. 2012, vol. 49, No. 1, 27th Symposium on Microelectronics Technology and Devices (SBMicro), Brazil, Brasilia, pp. 25-33, 2012.
R. Ishihara, M. R. T. Mofrad, J. Derakhshandeh, N. Golshani and C. I. M. Beenakker, “Monolithic 3D- ICs with Single Grain Si Thin Film Transistors”, IEEE 11th International Conference on SolidState and Integrated Circuit Technology (ICSICT), Xi'an, pp. 1-4, Oct.2012.
DOI:10.1109/ICSICT.2012.6467714 R. Ishihara, N. Golshani, J. Derakhshandeh, M.R. Tajari Mofrad and C.I.M. Beenakker, “Monolithic 3D-ICs with single grain Si thin film transistors”, 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, pp. 1-4, Mar. 2011.
N. Golshani, W.B. de Boer, T.L.M. Scholtes, A. Sakic, L.K. Nanver, “The influence of stacking faults on the leakage current of B-layer p+n diodes”, Proc. STW-SAFE, Veldhoven, Nederland, pp. 81-84, 2010.