publication . Article . 2015

24-mu m spin relaxation length in boron nitride encapsulated bilayer graphene

J. Ingla-Aynés; M. H. D. Guimarães; R. J. Meijerink; P. J. Zomer; B. J. van Wees;
English
  • Published: 19 Nov 2015 Journal: Physical Review B, volume 92, issue 20 (issn: 1098-0121, eissn: 1550-235X, Copyright policy)
Abstract
We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths lambda(s) up to 13 mu m at room temperature with relaxation times tau(s) of 2.5 ns. At 4 K, the diffusion coefficient rises up to 0.52 m(2)/s, a value five times higher than the best achieved for graphene spin valves up to date. As a consequence, lambda(s) rises up to 24 mu m with tau(s) as high as 2.9 ns. We characterized three different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the s...
Subjects
free text keywords: ROOM-TEMPERATURE, LAYER GRAPHENE, TRANSPORT, SINGLE, Physics, Bilayer graphene, Boron nitride, chemistry.chemical_compound, chemistry, Lambda, Spin relaxation, Hexagonal boron nitride, Spin-½, Condensed matter physics, Graphene, law.invention, law, Nuclear magnetic resonance
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Graphene-Based Revolutions in ICT And Beyond
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Graphene-based disruptive technologies
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Spintronics in Graphene
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