Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

Article English OPEN
Sammak, A.; Aminian, M.; Qi, L.; De Boer, W.B.; Charbon, E.; Nanver, L.K.;
  • Publisher: Electrochemical Society

The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control a... View more
Share - Bookmark

  • Download from
  • Cite this publication