Numerical study of extreme-ultra-violet generated plasmas in hydrogen

Doctoral thesis English OPEN
Astakhov, Dmitry;
(2016)
  • Publisher: Universiteit Twente
  • Subject: IR-100349 | METIS-316610

In this thesis, we present the development and study a numerical model of EUV-induced plasma. Understanding of behavior of low pressure low density plasmas is of industrial relevance, because of their potential use for on-line removal of different forms of contamination... View more
  • References (46)
    46 references, page 1 of 5

    Chapter 5 D.I. Astakhov, W.J. Goedheer, C.J. Lee, V.V. Ivanov, V.M. Krivtsun, A.I. Zotovich, S.M. Zyryanov, D.V. Lopaev, and F. Bijkerk, Plasma probe characteristics in low density hydrogen pulsed plasmas, Plasma Sources Sci. Technol. 24, 055018 (2015).

    Chapter 6 D.I. Astakhov, W.J. Goedheer, C.J. Lee, V.V. Ivanov, V.M. Krivtsun, K.N. Koshelev, D.V. Lopaev, R.M. van der Horst, J. Beckers, E.A. Osorio, F. Bijkerk, Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen, submied Chapter 7 D.I. Astakhov, W.J. Goedheer, C.J. Lee, V.V. Ivanov, V.M. Krivtsun, O. Yakushev, K.N. Koshelev, D. V. Lopaev, and F. Bijkerk, Numerical and experimental studies of the carbon etching in EUV-induced plasma, submied

    1 Introduction 13 1.1 EUV lithography, mirrors and pulsed plasmas . . . . . . . . . . . . . . . . . . . 13 1.2 Industry-related issue and simulations . . . . . . . . . . . . . . . . . . . . . . . 14 1.3 “Why a new code” . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

    3 Test problems 47 3.1 “Cold” diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 3.2 “Hot” diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

    7 Numerical and experimental studies of the carbon eting in EUV-induced plasma 87 7.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 7.2 Experimental setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 7.3 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 7.3.1 Chamber configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 7.3.2 Deielectric model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 7.3.3 Length scales and grid resolution . . . . . . . . . . . . . . . . . . . . . . 90 7.3.4 photo-electron emission . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 7.3.5 EUV spectrum and photoionization . . . . . . . . . . . . . . . . . . . . . 91 7.3.6 Cross-sections set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 7.4 Analysis of the charge - bias characteristic . . . . . . . . . . . . . . . . . . . . . 93 7.4.1 Average secondary electron yield . . . . . . . . . . . . . . . . . . . . . . 94 7.4.2 Role of dielectric ring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 7.5 Ion fluxes to the sample surface . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 7.6 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 7.7 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

    8 Valorisation and outline 103 8.1 Outlook and applications beyond EUV-induced plasmas . . . . . . . . . . . . . . 103

    [13] Burn J. Lin. “Sober view on extreme ultraviolet lithography”. In: Journal of Microlithography, Microfabrication, and Microsystems Vol. 5, No. 3 (2006), pp. 033005-12.

    [14] V. Y. Banine. “EUV Lithography: today and tomorrow”. In: Future Trends in Microelectronics: Frontiers and Innovations. 2013, pp. 120-132.

    [15] Vivek Bakshi. EUV sources for lithography. Bellingham, Wash.: SPIE Press, 2006. : 978-1-61583-716-8.

    [16] V. Y. Banine, K. N. Koshelev, and G. H. P. M. Swinkels. “Physical processes in EUV sources for microlithography”. In: Journal of Physics D: Applied Physics Vol. 44, No. 25 (2011), p. 253001. : 10.1088/0022-3727/44/25/253001.

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