Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of po... View more
 Q. Huang, P. Orsatti, and F. Piazza, “GSM transceiver front-end circuits in 0.25- m CMOS,” IEEE J. Solid-State Circuits, pp. 292-302, Mar. 1999.
 F. Bruccoleri, E. A. M. Klumperink, and B. Nauta, “Generating all 2-MOS transistors amplifiers leads to new wide-band LNAs,” IEEE J. Solid-State Circuits, vol. 36, pp. 1032-1040, July 2001.
 W. Zhuo, S. Embabi, J. Pineda de Gyvez, and E. Sanchez-Sinencio, “Using capacitive cross-coupling technique in RF low noise amplifiers and down-conversion mixer design,” in Proc. ESSCIRC, 2000, pp. 116-119.
 J. Janssens, M. Steyaert, and H. Miyakawa, “A 2.7-V CMOS broad band low noise amplifier,” in Symp. VLSI Circuits Dig. Tech. Papers, June 1997, pp. 87-88.
 E. A. M. Klumperink, “Transconductance based CMOS circuits: Generation, classification and analysis,” Ph.D. dissertation, Univ. of Twente, Enschede, The Netherlands, 1997.
 F. Bruccoleri, E. A. M. Klumperink, and B. Nauta, “Noise cancelling in wideband CMOS LNAs,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, vol. 45, San Francisco, CA, Feb. 2002, pp. 406-407.
 E. A. M. Klumperink, F. Bruccoleri, and B. Nauta, “Finding all elementary circuit exploiting transconductance,” IEEE Trans. Circuits Syst. II, vol. 48, pp. 1039-1053, Nov. 2001.
 A. J. Scholten, H. J. Tromp, L. F. Tiemeijer, R. Van Langevelde, R. J. Havens, P. W. H. De Vreede, R. F. M. Roes, P. H. Woerlee, A. H. Montree, and D. B. M. Klaassen, “Accurate thermal noise modeling for deep-submicron CMOS,” in Int. Electron Device Meeting Tech. Dig., Dec. 1999, pp. 155-158.
 F. Bruccoleri, “Wide-band CMOS low-noise amplifiers,” Ph.D. dissertation, Univ. of Twente, Enschede, The Netherlands, 2003.
 K. Bult and H. Wallinga, “A class of analog CMOS circuits based on the square-law characteristic of an MOS transistor in saturation,” IEEE J. Solid-State Circuits, vol. 22, pp. 357-365, June 1987.