Optical study of the band structure of wurtzite GaP nanowires

Article English OPEN
Assali, S.; Greil, J.; Zardo, I.; Belabbes, A.; de Moor, M.W.A.; Kölling, S.; Koenraad, P.M.; Bechstedt, F.; Bakkers, E.P.A.M.; Haverkort, J.E.M.;
(2016)

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires.... View more
  • References (8)

    48S. Koelling, N. Innocenti, A. Schulze, M. Gilbert, A. K. Kambham, and W. Vandervorst, J. Appl. Phys. 109, 104909 (2011).

    49S. Koelling, A. Li, A. Cavalli, S. Assali, D. Car, S. Gazibegovic, E. P. A. M. Bakkers, and P. M. Koenraad (unpublished) 50See http://www.ioffe.rssi.ru/SVA/NSM/Semicond/ for the impurity levels ionization energies.

    51P. J. Dean, Prog. Solid State Chem. 8, 1 (1973).

    52M. Grundmann, The Physics of Semiconductors (Springer, 2006).

    53E. Burstein, Phys. Rev. 93, 632 (1954).

    54B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U.

    Haboeck, and A. V. Rodina, Phys. Status Solidi 241, 231 (2004).

    55B. Monemar, P. P. Paskov, J. P. Bergman, G. Pozina, A. A. Toropov, T. V. Shubina, T. Malinauskas, and A. Usui, Phys. Rev. B 82, 235202 (2010).

  • Metrics
Share - Bookmark