Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility

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Tanaka, Masahiro; Omura, Ichiro;
  • Publisher: IEEE
  • Journal: 2012 24th International Symposium on Power Semiconductor Devices and Ics177-180
  • Subject: Shallow trench | CMOS process | 300-450mm wafer

Deep trench gate is used for latest IGBT to improve device performance. By large difference from deep submicron CMOS structure, there is no process compatibility among CMOS device and trench gate IGBT. We propose IGBT scaling rule for shrinking IGBT cell structure both ... View more
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