Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

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Nishio, Kengo ; Ozaki, Taisuke ; Morishita, Tetsuya ; Mikami, Masuhiro (2010)
  • Publisher: American Physical Society
  • Journal: Physical Review B, volume 81, issue 11, pages 115444-1-115444-11 (issn: 1098-0121)
  • Subject: conducting wires | silicon-fullerene-linked nanowires | semiconductor | Tunable electronic transport properties | tunnel diodes
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Superconductivity | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum tunneling. More significantly, the junctions have asymmetric I-V_b curves, which could be used as rectifiers. The current-voltage curves are interpreted by band-overlapping models. Tunable electronic transport properties of silicon-fullerene-linked nanowires could find many applications such as field-effect transistors, conducting wires, and tunnel diodes.
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