publication . Research . 2009

Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

渡辺, 重佳;
Open Access Japanese
  • Published: 31 Mar 2009 Journal: 湘南工科大学紀要 = Memoirs of Shonan Institute of Technology, volume 43, issue 1, pages 47-66 (issn: 0919-2549, Copyright policy)
  • Publisher: 湘南工科大学
Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has been discussed using the cost analysis ofBiCS (Bit Cost Scalable) type NAND flash memory. Vertical one transistor type memory cell which can be connected inseries and rando...
Download from
Research . 2009
Provider: JAIRO
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue