Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

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Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.;
(2011)
  • Publisher: Taylor & Francis
  • Journal: Philosophical Magazine,volume 91,issue 3,pages421-436 (issn: 1478-6435)
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  • Subject: Czochralski grown silicon | Czochralski grown silicon | point defect | interstitial cluster | irradiation damage | electron irradiation | electron irradiation;

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} int... View more
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