publication . Article . 2014

다양한 펄스 반복률에서의 NPN BJT (Bipolar Junction Transistor)의 파괴 특성에 관한 연구

Jeong-Ju Bang; Chang-Su Huh; Jong-Won Lee;
Open Access
  • Published: 01 Mar 2014 Journal: Journal of the Korean Institute of Electrical and Electronic Material Engineers, volume 27, pages 167-171 (issn: 1226-7945, Copyright policy)
  • Publisher: The Korean Institute of Electrical and Electronic Material Engineers
Abstract
Agency for Defence Development, Daejeon 305-152, Korea(Received February 10, 2014; Accepted February 19, 2014)Abstract: This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525∼575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. P...
Subjects
free text keywords: Optoelectronics, business.industry, business, Pulse injection, Composite material, Rise time, Materials science, Pulse (signal processing), Bipolar junction transistor, Transistor, law.invention, law, Breakdown voltage, Electrical engineering, Voltage
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