publication . Article . 2008

Simulated [111] Si–SiGe terahertz quantum cascade laser

Alexander Valavanis; Robert Kelsall;
Open Access
  • Published: 14 Jan 2008 Journal: Applied Physics Letters, volume 92, page 21,124 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
Abstract
The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40cm−1 and a threshold current density of 70A∕cm2.
Subjects
arXiv: Condensed Matter::Materials SciencePhysics::Optics
free text keywords: Physics and Astronomy (miscellaneous)
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