publication . Article . 2017

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Zhengwei Chen; Hongling Wei; Weihua Tang; Wei Cui; Zhenping Wu; Yuanqi Huang;
Open Access
  • Published: 01 Nov 2017 Journal: AIP Advances, volume 7, page 115,216 (eissn: 2158-3226, Copyright policy)
  • Publisher: AIP Publishing
Abstract
Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microsc...
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doi: 10.1063/1.5009032
Subjects
free text keywords: Physics, QC1-999, Molecular beam epitaxy, Band gap, Monoclinic crystal system, Transmission electron microscopy, Optoelectronics, business.industry, business, Sapphire, Absorption spectroscopy, Crystal, Materials science, Epitaxy
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