Ferroelectric HfO2-based materials for next-generation ferroelectric memories

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Zhen Fan; Jingsheng Chen; John Wang;
(2016)

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poo... View more
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