publication . Article . 2014

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

Open Access English
  • Published: 01 May 2014 Journal: Sensors & Transducers (issn: 2306-8515, eissn: 1726-5479, Copyright policy)
  • Publisher: IFSA Publishing, S.L.
The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.
free text keywords: GaN, Electrical Characterization, Modeling, Schottky Diode., Technology (General), T1-995
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