Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

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H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER;
(2014)
  • Publisher: IFSA Publishing, S.L.
  • Journal: Sensors & Transducers (issn: 2306-8515, eissn: 1726-5479)
  • Publisher copyright policies & self-archiving
  • Subject: GaN | Electrical Characterization | Modeling | Schottky Diode. | Technology (General) | T1-995

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current ... View more
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