publication . Article . 2003

Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

A. S. Somintac; E. Estacio,; M. F. Bailon; A. A. Salvador;
Open Access English
  • Published: 01 Jun 2003 Journal: Science Diliman (issn: 0115-7809, eissn: 2012-0818, Copyright policy)
  • Publisher: University of the Philippines
High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.
arXiv: Physics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Other
free text keywords: vertical-cavity surface-emitting laser, VCSEL, Optoelectronic application, Science, Q, Science (General), Q1-390
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Article . 2003
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