publication . Article . 2013

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

P. Sangeetha; K. Jeganathan; V. Ramakrishnan;
Open Access
  • Published: 01 Jun 2013 Journal: AIP Advances, volume 3, page 62,114 (eissn: 2158-3226, Copyright policy)
  • Publisher: AIP Publishing
Abstract
The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high) phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is found to be low in the order ∼ 1016 cm−3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consist...
Subjects
free text keywords: General Physics and Astronomy, Transmission electron microscopy, Charge carrier, Raman spectroscopy, symbols.namesake, symbols, Nanowire, Phonon, Optoelectronics, business.industry, business, Chemistry, Molecular beam epitaxy, Raman scattering, Wide-bandgap semiconductor, Physics, QC1-999
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publication . Article . 2013

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

P. Sangeetha; K. Jeganathan; V. Ramakrishnan;