publication . Article . 2014

Monolithically Integrated Ge-on-Si Active Photonics

Jifeng Liu;
Open Access English
  • Published: 01 Jul 2014 Journal: Photonics (issn: 2304-6732, Copyright policy)
  • Publisher: MDPI AG
Abstract
Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping,...
Subjects
arxiv: Condensed Matter::Materials SciencePhysics::Optics
free text keywords: integrated silicon photonics, GeSi, TA1501-1820, GeSn, band engineering, lasers, photodetectors, Applied optics. Photonics, tensile strain, modulators, optoelectronics, Ge
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