Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

Article English OPEN
B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic;
  • Publisher: Hindawi Limited
  • Journal: Journal of Nanomaterials (issn: 1687-4110, eissn: 1687-4129)
  • Related identifiers: doi: 10.1155/2018/9326408
  • Subject: Technology (General) | T1-995 | Article Subject

The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix l... View more
Share - Bookmark