Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

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B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic;

The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix l... View more
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