publication . Other literature type . Article . 2018

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic;
  • Published: 01 Jan 2018
  • Publisher: Hindawi Limited
<jats:p>The annealing behavior of very thin SiO<jats:sub>2</jats:sub>/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO<jats:sub>2</jats:sub> matrix leaving small (about 3 nm) spherical voids embedded in the SiO<jats:sub>2</jats:sub> matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization (in horizontal direction). The formed films produce intensive photoluminescence (PL) with a peak at 50...
free text keywords: General Materials Science, Ultra-high vacuum, Deposition (law), Vertical direction, Materials science, Annealing (metallurgy), Substrate (chemistry), Void (astronomy), Inert gas, Photoluminescence, Composite material, Technology (General), T1-995, Article Subject
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