Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

Article English OPEN
Yudi Darma;
  • Publisher: Institut Teknologi Bandung
  • Journal: ITB Journal of Science (issn: 1978-3043)
  • Publisher copyright policies & self-archiving
  • Subject: DOAJ:Mathematics and Statistics | compositional mixing | Mathematics | charging effect | photoemission | Si dot | Thermal stability | DOAJ:Mathematics | LPCVD | Ge core | Q | Science | QA1-939
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS resu... View more
Share - Bookmark