publication . Article . 2008

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

Yudi Darma;
Open Access English
  • Published: 01 Mar 2008 Journal: ITB Journal of Science, volume 40, issue 1, pages 88-96 (issn: 1978-3043, Copyright policy)
  • Publisher: Institut Teknologi Bandung
Abstract
Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by for...
Persistent Identifiers
Subjects
arXiv: Condensed Matter::Materials ScienceCondensed Matter::Mesoscopic Systems and Quantum Hall Effect
free text keywords: charging effect, compositional mixing, Ge core, LPCVD, photoemission, Si dot, Thermal stability, DOAJ:Mathematics, DOAJ:Mathematics and Statistics, Multidisciplinary, lcsh:Mathematics, lcsh:QA1-939, lcsh:Science, lcsh:Q, Chemical vapor deposition, Atom, Density of states, Molecular physics, X-ray photoelectron spectroscopy, Materials science, Binding energy, Quantum dot, Condensed matter physics, Annealing (metallurgy), Potential well
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