Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures

Article, Other literature type English OPEN
Jer-Chyi Wang ; Rajat Subhra Karmakar ; Yu-Jen Lu ; Chiung-Yin Huang ; Kuo-Chen Wei (2015)
  • Publisher: MDPI AG
  • Journal: Sensors, volume 15, issue 1, pages 818-831 (issn: 1424-8220, eissn: 1424-8220)
  • Related identifiers: doi: 10.3390/s150100818, pmc: PMC4327051
  • Subject: TP1-1185 | piezoresistive | inter-digitated | Chemical technology | relaxation time | Article | cross-point | poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)

The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.
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