193 231 [1] G. Calderini et al., Nucl.Instrum.Meth. A636 (2011) S37-S41. 232 [2] G. Casse et al., DA AGGIUNGERE 233 [3] VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 234 VTT, Finland; http://www.vtt.fi 235 [4] A. Macchiolo et al., ”Thin n-in-p pixel sensors and the SLID-ICV verti236 cal integration technology for the ATLAS upgrade at the HL-LHC”, Pro237 ceedings for Pixel 2012 Conference, Nucl. Instr. and Meth. A, in press, 238 http://arxiv.org/abs/1210.7933
Figure 13: Detail of the metal biasing scheme for a sensor with 50x250 m239 [5] Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-
pixels designed by the ATLAS Dortmund group and produced by CiS. Di erent240 CMM) Povo di Trento (TN), Italy. http://www.fbk.eu
geometry designs have been tested to optimise the sensor performance. 241 [6] M. Bomben et al., Nucl. Instrum. and Meth. A 712, 41 (2013). 242 [7] G. Calderini et al., Development of edgeless Silicon pixel sensors on p243 type substrate for the ATLAS High-Luminosity upgrade, Proceedings for
6. Bulk materials 244 9th HSTD Hiroshima 2013 Conference, Nucl. Instrum. and Meth. A, in 245 press, http://arxiv.org/abs/xxxx.xxxx Special mention needs to be done for a recent study by the246 [8] M. Garcia-Sciveres, D. Arutinov, M. Barbero, et al. The FE-I4 pixel read-
ATLAS Dortmund group, which is trying to improve the radia-247 out integrated circuit - 2011. Nucl.Instrum.Meth., A636, 155
tion hardness of n-in-n sensors by the use of a MCz bulk. The248 [9] Santa Cruz Institute for Particle Physics (SCIPP), University of California 249 Santa Cruz, USA.
intermediate layers of the upgraded ATLAS tracker will be ex-250 [10] U.S. Naval Research Laboratory, 4555 Overlook Ave., SW Washington,
posed to a mix of ionising and non-ionising radiation. MCz ma-251
terial is expected to have a better performance with respect to252
standard DOFZ bulk under these conditions [19]. For this rea-253 254
son, MCz FE-I4-design prototype sensors have been produced255
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