Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method
Article, Other literature type
- Publisher: MDPI
(issn: 1996-1944, eissn: 1996-1944)
QC120-168.85 | IGZO | SIMS | Engineering (General). Civil engineering (General) | Technology | Article | deposition power | TA1-2040 | T | co-sputtering method | Electrical engineering. Electronics. Nuclear engineering | TK1-9971 | Microscopy | QH201-278.5 | Descriptive and experimental mechanics
High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3...