Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC

Doctoral thesis English OPEN
Alassaad , Kassem;
(2014)
  • Publisher: HAL CCSD
  • Subject: 3C-SiC | Homoépitaxie | [ PHYS.COND.CM-GEN ] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] | Hétéroépitaxie | Growth mechanism | Incorporation de Ge | Mécanisme de croissance | Heteroepitaxy | Homoepiataxy | GeH4 | Ge incorporation | 4H-SiC

In this work, addition of GeH4 gas to the classical SiH4+C3H8 precursor system is reported for the epitaxial growth of SiC by chemical vapor deposition. The main objective of this fundamental study is to explore the influence of Ge presence within SiC lattice or at its ... View more
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