Subject: CMOS | voltage 1 V | temperature 77 K | Temperature measurement | EWI-26895 | Optical device fabrication | Avalanche photodiode (APD) | Optical sensors | temperature 293 K to 298 K | METIS-316863 | telecom band | Nearinfrared photodiode | Ge-on-Si | Silicon | Pure gallium and pure boron (PureGaB) | avalanche photodiodes | APD | Photodiodes | Optical imaging | anode contacts | IR-99741 | CMOS integrated circuits
arxiv: Physics::Instrumentation and Detectors
Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pix... View more
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