CMOS-compatible PureGaB Ge-on-Si APD pixel arrays

Article English OPEN
Sammak, Amir; Aminian, Mahdi; Nanver, Lis K.; Charbon, Edoardo;
(2016)
  • Journal: volume 63,pages92-99issn: 0018-9383
  • Related identifiers: doi: 10.1109/TED.2015.2457241
  • Subject: CMOS | voltage 1 V | temperature 77 K | EWI-26895 | Avalanche photodiode (APD) | temperature 293 K to 298 K | METIS-316863 | telecom band | Nearinfrared photodiode | Ge-on-Si | avalanche photodiodes | APD | Pure gallium and pure boron (PureGaB) | anode contacts | IR-99741
    arxiv: Physics::Instrumentation and Detectors

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pix... View more
Share - Bookmark