publication . Article . 2019

Low-Loss EELS Investigations on Atomically Thin MoxW(1-x)S2 Nanoflakes for Delving into Their Optoelectronic Properties

Pelaez-Fernandez, M.; Lin, Y.C.; Suenaga, K.; Arenal, R.;
Open Access
  • Published: 12 Apr 2019 Journal: Microscopy and Microanalysis, volume 24, pages 1,576-1,577 (issn: 1431-9276, eissn: 1435-8115, Copyright policy)
  • Publisher: Cambridge University Press (CUP)
  • Country: Spain
For more than a decade, the scientific community has developed a broadening interest in atomically thin 2D materials; due to their attractive mechanical, thermal and electronic properties. Within this family of materials, transition metal dichalcogenides (TMD) have been on the peak of this research interest lately. These materials present a TX2 type where T is a transition metal of groups IV, V or VI, and X stands for a chalcogen (S, Se or Te). Focusing on their electronic properties, a point of great interest application-wise is band gap tuning. In bulk, materials, one of the major techniques used for this purpose consists on alloying materials with different b...
free text keywords: Materials science, Optoelectronics, business.industry, business
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Funded by
EC| GrapheneCore2
Graphene Flagship Core Project 2
  • Funder: European Commission (EC)
  • Project Code: 785219
  • Funding stream: H2020 | SGA-RIA
FET H2020FET FLAG: Graphene FET Flagship core project
FET H2020FET FLAG: Graphene Flagship Core Project 2
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